MICROELECTRONICS APPLICATIONS OF DEPOSITED Si FILMS RECRYSTALLIZED FROM THE MELT

نویسندگان

  • G. K. Celler
  • L. E. Trimble
چکیده

Crystalline Si films on insulating substrates are needed for high-performance large scale integrated circuits, for high voltage devices, and for large area circuits used in flat-panel displays. Such films have been successfully formed by selective melting and recrystallization of polycrystalline Si deposited from the vapor on oxidized Si wafers and on bulk fused silica. Depending on the precursor structure and on the melting procedure, large crystallites or single crystalline layers are achieved. We describe Si recrystallization with cw and Q-switched lasers, with graphite heaters and with high intensity lamps. Transistor fabrication in recrystallized films is reviewed, and the influence of residual grain boundaries and other defects on device performance is evaluated. In addition, applications of beam-processed polysilicon in conventional integrated circuits are described.

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تاریخ انتشار 2018